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Transistors
2SC5556
Silicon NPN epitaxial planar type
Unit: mm
For UHF band low-noise amplification Features
* Low noise figure NF * High transition frequency fT * Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing
0.40+0.10 -0.05 3 1.50+0.25 -0.05 2.8+0.2 -0.3
0.16+0.10 -0.06
1
2 (0.65)
(0.95) (0.95) 1.90.1 2.90+0.20 -0.05 10
Absolute Maximum Ratings Ta = 25C
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation * Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 15 10 2 80 300 150 -55 to +150 Unit V V V mA mW C C
1.1+0.2 -0.1
1.1+0.3 -0.1
1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Package
Marking symbol 3K
Note) *: Copper plate at the collector is more than 1.0 mm2 in area, 1.0 mm in thickness
Electrical Characteristics Ta = 25C 3C
Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Forward transfer gain Noise figure Maximum unilateral power gain Collector output capacitance Gain bandwidth product Symbol VCBO VCEO ICBO IEBO hFE S21e2 NF GUM Cob fT Conditions IC = 10 A, IE = 0 IC = 100 A, IB = 0 VCB = 10 V, IE = 0 VEB = 2 V, IC = 0 VCE = 8 V, IC = 20 mA VCE = 8 V, IC = 20 mA, f = 800 MHz VCE = 8 V, IC = 20 mA, f = 800 MHz VCE = 8 V, IC = 20 mA, f = 800 MHz VCB = 10 V, IE = 0, f = 1 MHz VCE = 8 V, IC = 20 mA, f = 800 MHz 5.0 110 7.5 10 1.7 11.5 0.9 6.0 1.2 Min 15 10 1 1 250 dB dB dB pF GHz Typ Max Unit V V A A
0 to 0.1
0.40.2
5
Publication date: June 2002
SJC00278AED
1
2SC5556
PC Ta
350
90 80 Ta = 25C
IC VCE
Collector to emitter saturation voltage VCE(sat) (V)
IB = 600 A 500 A 400 A 60 50 40 30 20 10 0 0 2 4 6 8 10 12 200 A 300 A
1
VCE(sat) IC
IC / IB = 10
Collector power dissipation PC (mW)
300 250 200 150 100 50 0
Collector current IC (mA)
70
0.1 25C
Ta = 85C
-25C
100 A
0.01
0
40
80
120
160
1
10
100
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Collector current IC (mA)
hFE IC
200 VCE = 8 V Ta = 85C
10
Cob VCB
Collector output capacitance Cob (pF)
f = 1 MHz Ta = 25C
180
Forward current transfer ratio hFE
160 140 120 100 80 60 40 20 0 1 10 100 1 000 -25C 25C
1
0.1
0
5
10
15
20
25
Collector current IC (mA)
Collector to base voltage VCB (V)
2
SJC00278AED
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL

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